MRSEC II
IRG 2 Publications
Key
l = Primary Support
m = Partial Support
S = SEF
1. l M. Degawa, K. Thürmer and E. D. Williams, "Kinetic Parameters of Pb Obtained from Crystallite Evolutions." Japanese Journal of Applied Physics 45, 2070-5 (2006).
2. m B. Xu, B. Varughese, D. Evans and J. E. Reutt-Robey, "Morphology Selected Molecular Architecture: Acridine Carboxylic Acid Monolayers on Ag(111)." 110, 1271-6 (2006).
3. Sl O. Bondarchuk, D. B. Dougherty, M. Degawa, E. D. Williams, M. Constantin, C. Dasgupta and S. Das Sarma, "Correlation Time for Step Fluctuations." Physical Review B 71, 045426/1-10 (2005).
4. l M. Degawa and E. D. Williams, "Barriers to Shape Evolution of Supported Nano-Crystallites." Surface Science 595, 87-96 (2005).
5. Sl M. Degawa, F. Szalma and E. D. Williams, "Nano-Scale Equilibrium Crystal Shapes." Surface Science 583, 126-38 (2005).
6. Sl D. B. Dougherty, C. Tao, O. Bondarchuk, W. G. Cullen, E. D. Williams, M. Constantin, C. Dasgupta and S. Das Sarma, "Sampling-Time Effects for Persistence and Survival Step Structural Fluctuations." Physical Review E 71, 021602/1-8 (2005).
7. l P. Hyldgaard and T. L. Einstein, "Interactions Mediated by Surface States: From Pairs and Trios to Adchains and Ordered Overlayers." Journal of Crystal Growth 275, e1637-42 (2005).
8. Sl M. Ranganathan, T. Zhao, J. D. Weeks, D. B. Dougherty and E. D. Williams, "Spiral Evolution in a Confined Geometry." Physical Review Letters 95, 225505/1-4 (2005).
9. l F. Szalma, H. Gebremariam and T. L. Einstein, "Fluctuations, Line Tensions, and Correlation Times of Nanoscale Islands on Surfaces." Physical Review B 71, 035422/1-10 (2005).
10. l T. Zhao, J. D. Weeks and D. Kandel, "From Discrete Hopping to Continuum Modeling on Vicinal Surfaces with Applications to Si(001) Electromigration." Physical Review B 71, 155326/1-9 (2005).
11. l T. Zhao and J. D. Weeks, "A Two-Region Diffusion Model for Current-Induced Instabilities of Step Patterns on Vicinal Si(111) Surfaces." Surface Science 580, 107-21 (2005).
12. m M. Constantin and S. Das Sarma, "Generalized Survival in Equilibrium Step Fluctuations." Physical Review E 69, 052601/1-4 (2004).
13. m M. Constantin and S. Das Sarma, "Mapping Spatial Persistent Large Deviations of Nonequilibrium Surface Growth Processes onto the Temporal Persistent Large Deviations of Stochastic Random Walk Processes." Physical Review E 70, 041602/1-5 (2004).
14. l M. Constantin, C. Dasgupta, P. Punyindu Chatraphorn, S. N. Majumdar and S. Das Sarma, "Persistence in Nonequilibrium Surface Growth." Physical Review E 69, 061608/1-22 (2004).
15. l M. Constantin, S. Das Sarma and C. Dasgupta, "Spatial Persistence and Survival Probabilities For Fluctuating Interfaces." Physical Review E 69, 051603/1-10 (2004).
16. l C. Dasgupta, M. Constantin, S. Das Sarma and S. N. Majumdar, "Survival in Equilibrium Step Fluctuations." Physical Review E 69, 022101/1-4 (2004).
17. Sl D. B. Dougherty, I. Lyubinetsky, T. L. Einstein and E. D. Williams, "Distinguishing Step Relaxation Mechanisms via Pair Correlation Functions." Physical Review B 70, 235422/1-5 (2004).
18. Sl D. B. Dougherty, K. Thürmer, M. Degawa, W. G. Cullen, J. E. Reutt-Robey and E. D. Williams, "Triggered Fast Relaxation of Metastable Pb Crystallites." Surface Science 554, 233-44 (2004).
19. l H. Gebremariam, S. D. Cohen, H. L. Richards and T. L. Einstein, "Analysis of Terrace-Width Distributions Using the Generalized Wigner Surmise: Calibration Using Monte Carlo and Transfer-Matrix Calculations." Physical Review B 69, 125404/1-11 (2004).
20. l H.-C. Kan, S. Shah, T. Tadayyon-Eslami and R. J. Phaneuf, "Transient Evolution of Surface Roughness on Patterned GaAs(001) During Homoepitaxial Growth." Physical Review Letters 92, 146101/1-4 (2004).
21. m P. J. Rous, R. Yongsunthon, A. Stanishevsky and E. D. Williams, "Real-Space Imaging of Current Distributions at the Submicron Scale Using Magnetic Force Microscopy: Inversion Methodology." Journal of Applied Physics 95, 2477-86 (2004).
22. m K. Siegrist, V. W. Ballarotto, M. Breban, R. Yongsunthon and E. D. Williams, "Imaging Buried Structures with Photoelectron Emission Microsopy." Applied Physics Letters 84, 1419-21 (2004).
23. l T. J. Stasevich, T. L. Einstein, R. K. P. Zia, M. Giesen, H. Ibach and F. Szalma, "Effects of Next-Nearest-Neighbor Interactions on the Orientation Dependence of Step Stiffness: Reconciling Theory with Experiment for Cu(001)." Physical Review B 70, 245404/1-7 (2004).
24. m E. D. Williams, "Nanoscale Structures: Lability, Length Scales and Fluctuations." MRS Bulletin 29, 621-30 (2004).
25. l T. Zhao, J. D. Weeks and D. Kandel, "Unified Treatment of Current-Induced Instabilities on Si Surfaces." Physical Review B 70, 161303(R)/1-4 (2004).
26. l M. Constantin, S. Das Sarma, C. Dasgupta, O. Bondarchuk, D. B. Dougherty and E. D. Williams, "Infinite Family of Persistence Exponents for Interface Fluctuations." Physical Review Letters 91, 086103/1-4 (2003).
27. m S. Dieluweit, H. Ibach, M. Giesen and T. L. Einstein, "Orientation Dependence of the Cu(001) Surface Step Stiffness: Failure of Solid-on-Solid and Ising Models to Describe Experimental Data." Physical Review B 67, 121410(R)/1-4 (2003).
28. Sm D. B. Dougherty, O. Bondarchuk, M. Degawa and E. D. Williams, "Persistence Exponents for Step Edge Diffusion." Surface Science 527, L213-8 (2003).
29. l T. L. Einstein, "Applications of Ideas from Random Matrix Theory to Step Distributions on 'Misoriented' Surfaces." Annales Henri Poincaré 4, S811-24 (2003).
30. m P. Hyldgaard and T. L. Einstein, "Surface-State Mediated Three-Adsorbate Interaction: Electronic Nature and Nanoscale Consequences." Surface Science 532-535, 600-5 (2003).
31. m P. Hyldgaard and T. L. Einstein, "Surface-State Mediated Three-Adsorbate Interaction: Exact and Numerical Results and Simple Asymptotic Expression." Applied Surface Science 212-213, 856-60 (2003).
32. m H.-C. Kan, D. Auerbach and R. J. Phaneuf, "Approach for Investigating the Astigmatism of a Magnetic Prism in Low-Energy Electron Microscopy." Review of Scientific Instruments 74, 1008-15 (2003).
33. m J. Y. Park and R. J. Phaneuf, "Conductance Imaging of Thermally Desorbed Silicon Oxide." Journal of Vacuum Science and Technology B 21, 1254-7 (2003).
34. m J. Y. Park and R. J. Phaneuf, "Investigation of the Direct Electromigration Term for Al Nanodots within the Depletion Zone of a pn Junction." Journal of Applied Physics 94, 6883-6 (2003).
35. m J. Y. Park and R. J. Phaneuf, "Time Reponse in Tunneling to a pn Junction." Applied Physics Letters 82, 64-6 (2003).
36. l R. D. Schroll, S. D. Cohen, T. L. Einstein, J.-J. Métois, H. Gebremariam, H. L. Richards and E. D. Williams, "Si(1 1 1) Step Fluctuations in Reflection Electron Microscopy at 1100 ºC: Anomalous Step-Step Repulsion." Applied Surface Science 212-213, 219-23 (2003).
37. m S. Shah, T. J. Garret, K. Limpaphayom, T. Tadayyon-Eslami, H.-C. Kan and R. J. Phaneuf, "Patterning-based Investigation of the Length-Scale Dependence of the Surface Evolution During Multilayer Epitaxial Growth." Applied Physics Letters 83, 4330-2 (2003).
38. Sl K. Thürmer, E. D. Williams and J. E. Reutt-Robey, "Dewetting Dynamics of Ultrathin Silver Films on Si(111)." Physical Review B 68, 155423/1-7 (2003).
39. Sl K. Thürmer, J. E. Reutt-Robey and E. D. Williams, "Nucleation Limited Crystal Shape Transformations." Surface Science 537, 123-33 (2003).
40. m T. M. Trimble, R. C. Cammarata and K. Sieradzki, "The Stability of fcc (1 1 1) Metal Surfaces." Surface Science 531, 8-20 (2003).
41. m R. Yongsunthon, A. Stanishevsky, E. D. Williams and P. J. Rous, "Mapping Electron Flow Using Magnetic Force Microscopy." Applied Physics Letters 82, 3287-9 (2003).
42. m R. Yongsunthon, P. J. Rous, A. Stanishevsky, K. Siegrist and E. D. Williams, "Phase Imaging of Buried Structures." Applied Surface Science 210, 6-11 (2003).
43. m V. W. Ballarotto, M. Breban, K. Siegrist, R. J. Phaneuf and E. D. Williams, "Photoelectron Emission Microscopy of Ultrathin Oxide Covered Devices." Journal of Vacuum Science and Technology B 20, 2514-8 (2002).
44. l S. D. Cohen, R. D. Schroll, T. L. Einstein, J.-J. Métois, H. Gebremariam, H. L. Richards and E. D. Williams, "Si(111) Step Fluctuations at High Temperature: Anomalous Step-Step Repulsion." Physical Review B 66, 115310/1-6 (2002).
45. m S. Das Sarma, P. Punyindu Chatraphorn and Z. Toroczkai, "Universality Class of Discrete Solid-on-Solid Limited Mobility Nonequilibrium Growth Models for Kinetic Surface Roughening." Physical Review E 65, 036144/1-7 (2002).
46. Sl D. B. Dougherty, I. Lyubinetsky, E. D. Williams, M. Constantin, C. Dasgupta and S. Das Sarma, "Experimental Persistence Probability for Fluctuating Steps." Physical Review Letters 89, 136102/1-4 (2002).
47. l T. L. Einstein, "Crossover Between Terrace-Diffusion and Diffusion Step-to-Step on Vicinal Surfaces: Scaling Function and Analytic Approximations." Surface Science 521, L669-73 (2002).
48. m T. L. Einstein, "Step Interactions from Step-Step Correlations: Recent Progress and Remarkable Results for High-Temperature Vicinal Si (111)." Journal of the Japanese Association for Crystal Growth 29, 20-7 (2002).
49. m P. Hyldgaard and T. L. Einstein, "Surface-State Mediated Three-Adsorbate Interaction." Europhysics Letters 59, 265-71 (2002).
50. m H.-C. Kan, T. Dürkop and R. J. Phaneuf, "Comparison of Stigmatically Focusing Magnetic Prisms of Square Versus Round Symmetries." Journal of Vacuum Science and Technology B 20, 2519-25 (2002).
51. Sl I. Lyubinetsky, D. B. Dougherty, T. L. Einstein and E. D. Williams, "Dynamics of Step Fluctuations on a Chemically Heterogeneous Surface of Al/Si(111)-(Ö3xÖ3)." Physical Review B 66, 085327/1-5 (2002).
52. m J. Y. Park, E. D. Williams and R. J. Phaneuf, "Direct Imaging of a Biased p-n Junction with Conductance Mapping." Journal of Applied Physics 91, 3745-9 (2002).
53. m J. Y. Park and R. J. Phaneuf, "Polarity Dependence in Pulsed Scanning Tunneling Microscopy Fabrication and Modification of Metal Nanodots on Silicon." Journal of Applied Physics 92, 2139-43 (2002).
54. l P. Punyindu Chatraphorn and S. Das Sarma, "Layer by Layer Epitaxy in Limited Mobility Nonequilibrium Models of Surface Growth." Physical Review E 66, 041601/1-10 (2002).
55. Sl K. Thürmer, E. D. Williams and J. E. Reutt-Robey, "Autocatalytic Oxidation of Lead Crystallite Surfaces." Science 297, 2033-5 (2002).
56. l R. Yongsunthon, E. D. Williams, J. McCoy, R. Pego, A. Stanishevsky and P. J. Rous, "Test of Response Linearity For Magnetic Force Microscopy Data." Journal of Applied Physics 92, 1256-61 (2002).
57. Sm M. Degawa, K. Thürmer, I. Morishima, H. Minoda, K. Yagi and E. D. Williams, "Initial Stage of In-Phase Step Wandering on Si(111) Vicinal Surfaces." Surface Science 487, 171-9 (2001).
58. m R. Dixson, N. G. Orji, J. Fu, V. W. Tsai, E. D. Williams, R. Kacker, T. V. Vorburger, H. L. Edwards, D. Cook, P. E. West and R. Nyffenegger, "Silicon Single Atom Steps as AFM Height Standards." Proceedings of SPIE 4344, 157-68 (2001).
59. l T. L. Einstein, H. L. Richards, S. D. Cohen and O. Pierre-Louis, "Terrace-Width Distributions and Step-Step Repulsions on Vicinal Surfaces: Symmetries, Scaling, Simplifications, Subtleties, and Schrödinger." Surface Science 493, 460-74 (2001).
60. l T. L. Einstein, H. L. Richards, S. D. Cohen, O. Pierre-Louis and M. Giesen, "Terrace-Width Distributions on Vicinal Surfaces: Generalized Wigner Surmise and Extraction of Step-Step Repulsions." Applied Surface Science 175-176, 62-8 (2001).
61. Sm A. Emundts, H. P. Bonzel, P. Wynblatt, K. Thürmer, J. E. Reutt-Robey and E. D. Williams, "Continuous and Discontinuous Transitions on 3D Equilibrium Crystal Shapes: A New Look at Pb and Au." Surface Science 481, 13-24 (2001).
62. m M. I. Haftel and T. L. Einstein, "Influence of the Electrochemical Potential on Energy Landscapes Near Step- and Island-Edges: Ag(100) and Ag(111)." Applied Surface Science 175-176, 49-54 (2001).
63. m A. Ichimiya, K. Hayashi, E. D. Williams, T. L. Einstein, M. Uwaha and K. Watanabe, "Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters." Applied Surface Science 175-176, 33-5 (2001).
64. l H.-C. Kan and R. J. Phaneuf, "Focusing of Low Energy Electrons by Submicrometer Patterned Structures in Low Energy Electron Microscopy." Journal of Vacuum Science and Technology B 19, 1158-63 (2001).
65. m H.-C. Kan and R. J. Phaneuf, "A Quick Estimation of the LEED Pattern Size Formed by an Electrostatic Objective Lens in LEEM." Optik 112, 511-4 (2001).
66. Sl I. Lyubinetsky, D. B. Dougherty, H. L. Richards, T. L. Einstein and E. D. Williams, "Step Wandering on Al/Si(1 1 1)-(Ö3 x Ö3) Surface at High Temperatures." Surface Science 492, L671-76 (2001).
67. m J. Y. Park, R. J. Phaneuf and E. D. Williams, "Scanning Tunneling Spectroscopy of Field-Induced Au Nanodots on Ultrathin Oxides on Si(100)." Journal of Vacuum Science and Technology B 19, 523-6 (2001).
68. l O. Pierre-Louis and T. L. Einstein, "Electromigration of Single-Layer Clusters." Applied Surface Science 175-176, 129-33 (2001).
69. l P. Punyindu Chatraphorn and S. Das Sarma, "Comment on 'Kinetic Roughening in Polymer Film Growth by Vapor Deposition'." Physical Review Letters 86, 2696 (2001).
70. m P. Punyindu Chatraphorn, Z. Toroczkai and S. Das Sarma, "Epitaxial Mounding in Limited-Mobility Models of Surface Growth." Physical Review B 64, 205407/1-23 (2001).
71. Sl K. Thürmer, J. E. Reutt-Robey, E. D. Williams, M. Uwaha, A. Emundts and H. P. Bonzel, "Step Dynamics in 3D Crystal Shape Relaxation." Physical Review Letters 87, 186102/1-4 (2001).
72. l R. Yongsunthon, J. McCoy and E. D. Williams, "Calibrated Magnetic Force Microscopy Measurement of Current-Carrying Lines." Journal of Vacuum Science and Technology A 19, 1763-8 (2001).
73. l R. Yongsunthon, E. D. Williams, A. Stanishevsky, J. McCoy, R. Pego, P. Rous and M. Peckerar, "Magnetic Force Microscopy Signatures of Defects in Current-Carrying Lines." Materials Research Society Symposium Proceedings 669, 107-12 (2001).
74. l R. Yongsunthon, A. Stanishevsky, J. McCoy and E. D. Williams, "Observation of Current Crowding Near Fabricated Voids in Gold Lines." Applied Physics Letters 78, 2661-3 (2001).
75. m S. Das Sarma, P. Punyindu and Z. Toroczkai, "Non-Universal Mound Formation in Non-Equilibrium Surface Growth." Surface Science 457, L369-75 (2000).
76. m K. E. Khor and S. Das Sarma, "Quantum Dot Self-Assembly in Growth of Strained-Layer Thin Films: A Kinetic Monte Carlo Study." Physical Review B 62, 16657-64 (2000).
77. m J. Y. Park, R. J. Phaneuf and E. D. Williams, "Variation of Threshold Field in Field Induced Fabrication of Au Nanodots on Ultrathin in-situ Grown Silicon Oxide." Surface Science 470, L69-74 (2000).
78. m R. J. Phaneuf, H.-C. Kan, M. Marsi, L. Gregoratti, S. Günther and M. Kiskinova, "Imaging the Variation in Band Bending Across a Silicon pn Junction Surface Using Spectromicroscopy." Journal of Applied Physics 88, 863-8 (2000).
79. l O. Pierre-Louis and T. L. Einstein, "Electromigration of Single-Layer Clusters." Physical Review B 62, 13697-706 (2000).
80. m Z. Toroczkai, G. Korniss, S. Das Sarma and R. K. P. Zia, "Extremal-Point Densities of Interface Fluctuatons." Physical Review E 62, 276-94 (2000).