IRG 1: Low-Dimensional Interfaces

In contrast to planar interfaces, interfaces of low-dimension have distinctive special properties, including ease of structural fluctuations, and changes in electromagnetic boundary conditions. The goal of this research program is to understand and exploit these properties in junctions between ultra-thin films of electro-optic and nano-electronic materials to create novel device properties. The members of this IRG will build on a strong theoretical expertise in the statistical mechanics of nanoscale structure to guide and interpret experimental investigations of low-dimensional interfaces. Growth and patterning of mixed films of electronic materials will be coupled with experimental measurements of structure, temporal variation of structure, and local electronic properties of boundaries between the chosen materials. Experiments will correlate real-time measurements of nanoscale structure and structural fluctuations with simultaneous measurements of exciton annihilation and electronic transport across the low-dimensional interfaces. Characterization tools will include scanned probe techniques (STM, STS, SKP, and EFM), photoemission microscopy, and electron transport and scanning tunneling luminescence on fabricated model device structures. Theoretical tools will include kinetic Monte Carlo, linear stability analysis, level-set modeling and Langevin analysis. The broad research perspective of this group will be to evaluate the ultimate limits/new properties of structures where fluctuations represent a significant fraction of the active material.