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Controlling electronic transport and recombination at boundaries between different materials is the key to progress in a myriad of applications including device physics, nano-bio mimetics, energy harvesting and photonics. Revolutionary opportunities have opened in all of these areas through the use of nanoscale materials structures, with parallel new challenges resulting from the concomitant change in the ratio of surface and bulk properties. We directly access low-dimensional interfaces of nanostructures by fabricating layered materials and ultra-thin films with domain and interface boundaries accessible to scanned probe and electron microscopies. We combine the structural characterization of interfaces with in situ measurement of device properties by fabricating the materials of interest into model thin-film transistor stuctures.
The objective of this IRG is to optimize nanoscale interface structures for electron transport, and charge separation and recombination. To do so, we apply a full range of tools from theoretical modeling of interface structure based on fundamental interactions, to device preparation and characterization. Materials systems understudy include graphene, C60 and molecular organic semiconductors.
Janice Reutt-Robey
Professor, Chemistry & Biochemistry
Ted Einstein
Professor, Physics
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